Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
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概要
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A low on-resistance and high-breakdown-voltage enhancement-mode (E-mode) AlGaN/AlN/GaN high electron mobility transistor (HEMT) was fabricated without the recessed-gate process. A thin AlGaN barrier layer (4.5 nm) was used for the normally-off operation. In order to decrease the on-state resistance, two different techniques are used. One is the side-ohmic contact, which has a low contact resistance, due to the direct contact with the two-dimensional electron gas (2DEG). The other is SiO2 passivation, which induces the sheet carriers and decreases the sheet resistance. As a result, an on-state resistance of 1.9 m$\Omega$$\cdot$cm2 and an off-state breakdown voltage of 610 V were achieved for the E-mode HEMT within a threshold voltage of approximately $-0.1$ V.
- 2006-11-25
著者
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Ohmaki Yuji
Nitride Semiconductor Research Laboratory Nichia Corporation
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Tanimoto Masashi
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Ohmaki Yuji
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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Akamatsu Shiro
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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