Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
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概要
- 論文の詳細を見る
Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-02-15
著者
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Choi Jungkwon
Department Of Chemistry Graduate School Of Science Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Okamoto Koichi
Deparment Of Neurology Gunma University School Of Medicine
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Terazima Masahide
Department Of Chemistry Faculty Of Science Kyoto University
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Fujita Shigeo
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8510, Japan
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8510, Japan
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Terazima Masahide
Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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