Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors
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概要
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A series of single-phase wurzite MgxZn1-xO alloys from $x=0$ to 0.5 were successfully obtained by molecular beam epitaxial growth on sapphire substrates, resulting in artificial tuning of band gap energy $E_{\text{g}}$ from 3.3 to 4.5 eV which covers UV-A, UV-B, and solar-blind spectral regions. The problem of phase separation ever reported in the growth of MgxZn1-xO with higher Mg content, e.g., $x>0.4$ and $E_{\text{g}}>3.9$ eV, has been overcome by using a ZnO buffer layer. The Mg0.5Zn0.5O layers have been applied to a planar geometry Schottky type metal-semiconductor-metal photodetector, exhibiting the photoresponse for the wavelength shorter than 270 nm which correspond to the solar-blind region.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-04-15
著者
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Fujita Shizuo
International Innovation Center Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Tanaka Hiroshi
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Hoshi University
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TAKAGI Tsuyoshi
Department of Electronic Science and Engineering, Kyoto University
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