Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
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概要
- 論文の詳細を見る
Undoped ZnSe epitaxial layers have been grown at a temperature as low as 250℃ onto (100)GaAs substrates by a low-temperature and low-pressure organometallic vapor-phase epitaxial (OMVPE) technique using dimethylzinc (DMZ) and H_2Se as source materials. The epilayers have exhibited strong blue emission and low resistive n-type conductivity. Typical values of the electron concentration n, the resistivity p, and the electron Hall mobility μ are n=8.2×10^<16>cm^<-3>, p=0.31Ω・cm, and μ=244 cm^2/V・s, respectively.
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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MATSUDA Yoshinobu
Department of Electrical and Electronic Engineering, Nagasaki University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Matsuda Yoshinobu
Department Of Electrical Engineering Kyoto University
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Matsuda Yoshinobu
Department Of Electrical And Electronic Engineering Nagasaki University
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