Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors
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概要
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We observed, from mass analysis, enhancement of alkyl group elimination from alkylzinc (dimethyl- and diethylzinc) under photoirradiation of energy higher than the band gaps of the underlying II-VI semiconductors, where the growth rates in organometallic vapor-phase epitaxy (OMVPE) of these materials are remarkably enhanced. This result suggests the association of carriers generated at the growth surface for the alkyl group elimination, and this phenomenon seems to be one of the fundamental chemical processes contributing to the growth rate enhancement of Zn-based II-VI semiconductors.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Hirata S
Department Of Electrical Engineering Kyoto University
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Hirata Shin-ya
Department of Electrical Engineering, Kyoto University
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