Wet Etching of $\beta$-Ga2O3 Substrates
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概要
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Wet etching of (100)-oriented $\beta$-Ga2O3 single crystal substrates was carried out using H3PO4 and H2SO4. The etching reactions followed the Arrhenius equation, but the etching in H2SO4 at a high temperature of 190 °C was disturbed by the formation of sulfates on the surface. Considering the higher etching rate over the temperature range of 100–194 °C, H3PO4 is more preferable as an etchant for $\beta$-Ga2O3. Although the isotropic etching led to side etching, a grid pattern in the order of μm was successfully fabricated. These results indicate that this simple and low-cost wet etching using H3PO4 is suitable for isolating devices or patterning structures on $\beta$-Ga2O3 substrates.
- 2009-04-25
著者
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Okuno Takeya
Department Of Electronic Science And Engineering Kyoto University
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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Kobayashi Yasushi
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Arai Naoki
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Fujita Shizuo
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Oshima Takayoshi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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