Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
スポンサーリンク
概要
- 論文の詳細を見る
Semi-insulating layers (SIL) were formed on the surfaces of nominally undoped \beta-Ga<inf>2</inf>O<inf>3</inf>(010) single crystals by thermal oxidation. Capacitance--voltage measurement with double Schottky configuration was performed to evaluate the increase in the thickness of the SIL as a function of annealing temperature and time. A SiO<inf>2</inf>layer prepared on the surface prevented the extension of the SIL, indicating that oxygen incorporation from air and successive bulk diffusion dominated the carrier compensation process. The activation energy of oxygen diffusion coefficient was estimated to be 4.1 eV.
- 2013-05-25
著者
-
Ohtomo Akira
Department Of Applied Chemistry Tokyo Institute Of Technology
-
Mukai Akira
Department Of Cognitive Science (b-32) University Of Liege
-
Fujita Shizuo
Photonics And Electronics Science And Engineering Center Kyoto University
-
Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
-
Yamakoshi Shigenobu
Tamura Co. Ltd.
-
Masui Takekazu
Koha Co. Ltd.
-
Sasaki Kohei
Tamura Co. Ltd.
-
Kuramata Akito
Tamura Co. Ltd.
-
Kuramata Akito
Tamura Corporation, Sayama, Saitama 350-1328, Japan
-
Kaminaga Kenichi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Yamakoshi Shigenobu
Tamura Corporation, Sayama, Saitama 350-1328, Japan
-
Mukai Akira
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Fujita Shizuo
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
関連論文
- Crystal Structure and Valence Distribution of [(LaMnO_3)_m(SrMnO_3)_m]_n Artificial Superlattices(Condensed matter: structure and mechanical and thermal properties)
- Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs(Special Issue on Electronic Displays)
- 69. Dehydrogenases on tricarboxylic acid cycle of optic nerve by T.T.C. reduction
- Quantitative Conductivity Mapping of SrTiO_3-LaAlO_3-LaTiO_3 Ternary Composition-Spread Thin Film by Scanning Microwave Microscope
- Resistivity Anomaly Near Room Temperature of Y-Ba-Cu-O and Related Oxides as Created by the Surface Effect of Water
- Combinatorial Laser Molecular Beam Epitaxy (MBE) Growth of Mg-Zn-O Alloy for Band Gap Engineering
- Mg_xZn_O Films with a Low Residual Donor Concentration (
- Mg_xZn_O-Based Schottky Photodiode for Highly Color-Selective Ultraviolet Light Detection
- Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates
- High Electron Mobility Exceeding 10^4cm^2V^ s^ in Mg_xZn_O/ZnO Single Heterostructures Grown by Molecular Beam Epitaxy
- Analysis of Time-Resolved Donor-Acceptor Photoluminescence of N-Doped ZnO
- Photo-Irresponsive Thin-Film Transistor with Mg_xZn_O Channel
- Shifting Donor-Acceptor Photoluminescence in N-doped ZnO(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Blue Light-Emitting Diode Based on ZnO
- Proton NMR in Degraded Powder of YBa_2Cu_3O_ : Electrical Properties of Condensed Matter
- Construction and Superfunction of Metal-oxide Nanostructures and Interfaces(Interfaces by various techniques)
- Preparation of an Epitaxy-Ready Surface of a ZnO(0001) Substrate
- Improvement of Electron Mobility above 100,000 cm2 V-1 s-1 in MgxZn1-xO/ZnO Heterostructures
- High-Throughput Screening of Ultraviolet-Visible Magnetooptical Properties of Spinel Ferrite (Zn, Co)Fe_2O_4 Solid Solution Epitaxial Film by a Composition-Spread Approach
- Surface Potential Measurement of Tris(8-hydroxyquinolinato)aluminum and Bis[N-(1-naphthyl)-N-phenyl]benzidine Thin Films Fabricated on Indium--Tin Oxide by Kelvin Probe Force Microscopy
- Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films
- 29. Experimental Studies on the Phosphorous Metabolism of the Optic Nerve.
- Academic Achievement of English-Speaking Students in a Japanese Immersion Program
- Fabrication of Highly Crystalline Corundum-Structured $\alpha$-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates
- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on $\beta$-Ga2O3 Substrates
- Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Device-Quality β-GaO Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Evaluation of Misfit Relaxation in α-GaO Epitaxial Growth on α-AlO Substrate
- Wet Etching of $\beta$-Ga2O3 Substrates
- Electrical Conductive Corundum-Structured α-GaO Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition
- Device-Quality β-Ga_2O_3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Epitaxial Structures of Band-Gap-Engineered α-(Cr[x]Fex)O (0 x 1) Films Grown on C-Plane Sapphire (Special Issue : Applied Physics on Materials Research)
- Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources
- $\beta$-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
- Flame Detection by a $\beta$-Ga2O3-Based Sensor
- Epitaxial ZnO Thin Films on $a$-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition
- Formation of Semi-Insulating Layers on Semiconducting \beta-Ga
- (111)-Oriented Zn3N2 Growth on $a$-Plane Sapphire Substrates by Molecular Beam Epitaxy
- Si-Ion Implantation Doping in \beta-Ga
- \beta-Ga
- Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation
- Ga2O3 Thin Film Growth on $c$-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors