Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources
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概要
- 論文の詳細を見る
Silicon oxide thin films were grown from the liquid source, polysilazane, by using mist chemical vapor deposition (CVD) at temperatures of 200--350 °C. The films were grown with a reasonable growth rate of 12 nm/min at the temperature of 200 °C, and they showed resistivity of the order of 10^{13} \Omega\cdotcm, although the incorporation of carbon and oxygen remains as a problem to be discussed and solved in the future. The results are encouraging for the future application of mist CVD for the growth of silicon oxide films on plastic substrates.
- 2012-09-25
著者
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Fujita Shizuo
Photonics And Electronics Science And Engineering Center Kyoto University
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Katori Shigetaka
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Piao Jinchun
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kawaharamura Toshiyuki
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Li Chaoyang
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Fujita Shizuo
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
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