Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
スポンサーリンク
概要
著者
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Kamada Yudai
Photonics And Electronics Sci. And Engineering Center Kyoto Univ. Rohm Plaza Katsura Nishikyo-ku Kyo
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Fujita Shizuo
Photonics And Electronics Science And Engineering Center Kyoto University
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Furuta Mamoru
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Shimakawa Shin-ichi
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Kawaharamura Toshiyuki
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Li Chaoyang
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Wang Dapeng
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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