Successful Growth of Conductive Highly Crystalline Sn-Doped \alpha-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition

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概要

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• Highly crystalline \alpha-phase gallium oxide (Ga2O3) thin films were grown by fine-channel mist chemical vapor deposition on c-sapphire substrates at 400 °C at a deposition rate of more than 20 nm/min. The thin films were doped with Sn(IV) atoms, which were obtained from Sn(II) chloride by the reaction \text{SnCl_{2}}+ \text{H_{2}O_{2}}+ \text{2HCl}\rightarrow \text{SnCl_{4}}+ \text{2H_{2}O}. Conductive \alpha-phase Ga2O3 thin films were successfully grown from source solutions containing less than 10 at. % Sn(IV). The source solution containing 4 at. % Sn(IV) resulted in obtaining a thin film with an n-type conductivity as high as 0.28 S cm-1, a mobility of 0.23 cm2 V-1 s-1, a carrier concentration of 7\times 10^{18} cm-3, and a full width at half maximum (FWHM) of the (0006) reflection X-ray rocking curve as low as 64 arcsec.

• 2012-04-25

著者

• Furuta Mamoru

  Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Kawaharamura Toshiyuki

  Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Dang Giang

  Department of Environmental Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan

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