Effect of O₃ and Aqueous Ammonia on Crystallization of MgO Thin Film Grown by Mist Chemical Vapor Deposition
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概要
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Mist chemical vapor deposition (CVD) has been applied to fabricate MgO thin films under atmospheric pressure. In this work, to fabricate highly crystalline MgO thin films at low temperature, the effects of ozone gas (O<inf>3</inf>), aqueous ammonia (NH<inf>3</inf>), and a combination of O<inf>3</inf>and NH<inf>3</inf>on the crystallization temperature were studied by comparing samples grown under a standard condition of inactive gas such as argon (Ar). It was clarified that the crystallization temperature was decreased from 450 to 400 °C by the assistance of O<inf>3</inf>and the crystallinity was improved by the addition of NH<inf>3</inf>. The growth of higher crystallinity MgO thin films at temperatures above 400 °C was possible by the combination of O<inf>3</inf>and NH<inf>3</inf>, which caused stronger enhancement of the crystallization temperature and crystallinity. The causes of these effects were analyzed thermodynamically, and it was clarified that the results were due to the activated oxygen sources and the stability level of precursor materials in the solution.
- 2013-03-25
著者
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Kawaharamura Toshiyuki
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Hirao Takashi
Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan
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Mori Kazuharu
Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Kobe 650-0047, Japan
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Orita Hiroyuki
Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Kobe 650-0047, Japan
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Shirahata Takahiro
Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Kobe 650-0047, Japan
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