Flame Detection by a $\beta$-Ga2O3-Based Sensor
スポンサーリンク
概要
- 論文の詳細を見る
An oxide semiconductor of $\beta$-Ga2O3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT–PSS) Schottky contact/a semi-insulating layer of $\beta$-Ga2O3/n-type region of $\beta$-Ga2O3/an In ohmic contact. The spectral response of the detector exhibited a large 250-to-300-nm rejection ratio of $1.5 \times 10^{4}$ and an external quantum efficiency of 18% at 250 nm. The device successfully detected a flame by distinguishing 1.5 nW/cm2 solar-blind light from the flame under a strong fluorescent lamp illumination without any visible-cut filters. This result encourages the fabrication of practical $\beta$-Ga2O3-based flame detectors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-01-25
著者
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Suzuki Norihito
Nippon Light Metal Company Ltd.
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Okuno Takeya
Department Of Electronic Science And Engineering Kyoto University
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Oshima Takayoshi
Department Of Electronic Science And Engineering Kyoto University
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Arai Naoki
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Hino Harumichi
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Suzuki Norihito
Nippon Light Metal Co., Ltd., Kambara, Shimizu-ku, Shizuoka 421-3291, Japan
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Fujita Shizuo
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Oshima Takayoshi
Department of Applied Chemistry, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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