Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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藤田 茂夫
京都大学大学院工学研究科電子工学
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Fujita Shiz
Kyoto Univ. Kyoto Jpn
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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山口 滋
Department Of Physics School Of Science Tokai University
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Yamaguchi Shigeo
Department of Electrical Engineering, Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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藤田 静雄
京都大学大学院工学研究科電子物性工学専攻所属
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Kawakami Y
Kyoto Univ. Kyoto Jpn
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Kawakami Y
Ntt Corp. Yokosuka‐shi Jpn
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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KO Hyun-Chul
Department of Electronic Science and Engineering, Kyoto University
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KURUSU Hitoshi
Department of Electronic Science and Engineering, Kyoto University
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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Ko H‐c
Department Of Electronic Science And Engineering Kyoto University
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Kurusu Hitoshi
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Ko Hyun-chul
Department Of Electronic Science And Engineering Kyoto University
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Yamaguchi Shigeo
Department Of Electrical Electronic And Information Engineering Kanagawa University:energy Electroni
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