Fujita Shiz | Kyoto Univ. Kyoto Jpn
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概要
関連著者
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Fujita Shiz
Kyoto Univ. Kyoto Jpn
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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藤田 茂夫
京都大学大学院工学研究科電子工学
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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藤田 静雄
京都大学大学院工学研究科電子物性工学専攻所属
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藤田 静雄
京大 国際融合創造セ
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Fujita Shigetaka
Department Of Electrical Engineering Hachinohe Institute Of Technology
著作論文
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- InGaN量子井戸発光デバイスのふく射再結合機構 (ワイドギャップ半導体とそのデバイス応用論文小特集)