The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-02-01
著者
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藤田 茂夫
京都大学大学院工学研究科電子工学
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Fujita Shiz
Kyoto Univ. Kyoto Jpn
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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藤田 静雄
京都大学国際融合創造センター
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Ogawa Masahiro
Department of Cardiology, Fukuoka University School of Medicine
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Fujita S
Department Of Electronic Science And Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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藤田 静雄
京大 国際融合創造セ
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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藤田 静雄
京都大学大学院工学研究科電子物性工学専攻所属
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Ishida T
Department Of Physics Faculty Of Science Ibaraki University
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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Fujita Shigetaka
Department Of Electrical Engineering Hachinohe Institute Of Technology
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FUNATO Mitsuru
Department of Electronic Science and Engineering, Kyoto University
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ISHIDO Teruki
Department of Electronic Science and Engineering, Kyoto University
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Ogawa M
Sankyo Co. Ltd. Shiga‐ken Jpn
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Ogawa Masahiro
Department Of Applied Biological Science Faculty Of Agriculture Kagawa University
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Ishido Teruki
Department Of Electronic Science And Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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Ogawa Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Ogawa Masahiro
Department Of Anesthesiology Nihon University School Of Medicine
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