On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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藤田 茂夫
京都大学大学院工学研究科電子工学
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Fujita Shiz
Kyoto Univ. Kyoto Jpn
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Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
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Wu Yi-hong
Department Of Electrical Engineering Kyoto University:(present Address)department Of Electrical Engi
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Wu Y‐h
Taiwan Semiconductor Manufacturing Co. Hsin‐chu Twn
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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OHNAKADO Takahiro
Department of Electrical Engineering, Kyoto University
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Wu Yi-hsun
Taiwan Semiconductor Manufacturing Company R&d Device Department
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Kawakami Y
Kyoto Univ. Kyoto Jpn
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Kawakami Y
Ntt Corp. Yokosuka‐shi Jpn
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Fujita Shigetaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Hachinohe Institute Of Te
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Ohnakado Takahiro
Department Of Electrical Engineering Kyoto University
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Fujita Shizuo
Department Of Electrical Engineering Kyoto University
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