Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-01-20
著者
-
Fujita Shizuo
Department Of Electronic Science And Engineering Kyoto University
-
Wu Yi-hong
Department Of Electrical Engineering Kyoto University:(present Address)department Of Electrical Engi
-
Wu Y‐h
Taiwan Semiconductor Manufacturing Co. Hsin‐chu Twn
-
KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
-
FUJITA Shigeo
Department of Electrical Engineering Kyoto University
-
TOYODA Takashi
Department of Electrical Engineering, Kyoto University
-
Wu Yi-hsun
Taiwan Semiconductor Manufacturing Company R&d Device Department
-
Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
-
Toyoda Takashi
Department Of Electrical Engineering Kyoto University
-
Toyoda Takashi
Semiconductor Research Laboratory Mitsubishi Electric Corporations
-
Kawakami Y
Kyoto Univ. Kyoto Jpn
-
Kawakami Y
Ntt Corp. Yokosuka‐shi Jpn
-
Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Toyoda T
Univ. Electro‐communications Tokyo Jpn
-
Toyoda Takeshi
Materials And Structures Laboratory Tokyo Institute Of Technology
-
Fujita Shizuo
Department Of Electrical Engineering Kyoto University
-
TOYODA Takashi
Department of Applied Physics and Chemistry, The University of Electro-Communications
関連論文
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
- The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability
- The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process
- Structural and Electrical Properties of Ta_2O_5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source
- Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure
- Organometallic Vapor-Phase Epitaxial Growth and Characterization of GaAs/Zn(S, Se) Multilayered Structures
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
- Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
- X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Variable-Sensitivity Photodetector of pn-np Structure for Optical Neural Networks
- Accurate Measurement of Layer Thickness Using Optical Reflective Spectra of Bragg Mirrors Grown by Molecular Beam Epitaxy
- Dual-Frequency Addressed Variable Optical Attenuator with Submillisecond Response Time
- Liquid-Crystal-Based Fourier Optical Spectrum Analyzer without Moving Parts
- Cd-Doping in In_xGa_As_yP_ Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Comparative Study of Photoluminescence Dynamics of Tris (8-hydroxyquinoline) Aluminum-Based Organic Miltilayer Structures with Different Types of Energy Lineups
- Photoluminescence Dynamics of Aluminumquinoline/Oxadiazole Multilayer Structures
- Optical Properties of Aluminumquinoline-Oxadiazole Codeposited Luminescent Layers
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Growth of ZnO Nanorods on A-Plane (1120) Sapphire by Metal- Organic Vapor Phase Epitaxy
- Self-Assembled Three-Dimensional ZnO Nanosize Islands on Si Substrates with SiO_2 Intermediate Layer by Metalorganic Chemical Vapor Deposition : Semiconductors
- Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions
- Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
- Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO by Molecular Beam Epitaxy Using NO_2 as Oxygen Source
- MBE Growth of ZnO Using NO_2 as Oxygen Source
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Plasma-Deposited Silicon Nitride Films from SiF_2 as Silicon Source
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- Sendai Virus-Mediated Gene Delivery into Hepatocytes via Isolated Hepatic Perfusion(Miscellaneous)
- High Speed GaAs Digital Integrated Circuits
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source : Condensed Matter
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- S-Band Mobile Satellite Communications and Multimedia Broadcasting Onboard Equipment for ETS-VIII
- Dependence of the Photoacoustic Signal Intensity on Modulation Frequency for CdInGaS_4 Crystals under a Transmission Detection Configuration
- GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics : II-1: COMPOUND SOLAR CELLS
- Clinical Features of Hematological Disorders Caused by Copper Deficiency during Long-Term Enteral Nutrition
- A New Parameter for Assessing Postoperative Recovery of Physical Activity Using an Accelerometer
- Epitaxial Solution Growth of ZnTe on ZnSe
- Preparation of ZnSe-ZnTe Heterojunctions by Liquid-Phase Epitaxial Growth
- Blue Electroluminescence in ZnSe-ZnTe Heterojunctions
- A Case of Noninvasive Ductal Carcinoma Arising in Malignant Phyllodes Tumor
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Self-Organizing Process of Moderately Strained Zn_Cd_xSe Layer Grown on GaAs(110) by Molecular Beam Epitaxy
- Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- Properties of Ambient Air Aged Thin Porous Silicon
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- Cubic ZnCdS Lattice-Matched to GaAs : A Novel Material for Short-Wavelength Optoelectronic Applications
- Anterior cruciate ligament reconstruction and physiological joint laxity: earliest changes in joint stability and stiffness after reconstruction
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Surface Treatment of Indium-Tin-Oxide Substrates and Its Effects on Initial Nucleation Processes of Diamine Films
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source
- Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors
- Growth of ZnS by Metalorganic Chemical Vapor Deposition
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
- Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe
- Properties of CdTe p-n Diodes Prepared by Al Vapor-Diffusion
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films
- Gas-Phase and Surface Reactions in Xenon Lamp-Assisted Organometallic Vapor-Phase Epitaxy of ZnSe : Condensed Matter
- Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C_ Thin Films
- Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
- Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition
- Focused Ion Beam Patterning for Fabrication of Periodical Two-Dimensional Zinc Oxide Nanodot Arrays
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions
- Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors