Liquid-Crystal-Based Fourier Optical Spectrum Analyzer without Moving Parts

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• Wu Yi-hsun

  Taiwan Semiconductor Manufacturing Company R&d Device Department

• Lu Yan-qing

  College Of Optics And Photonics/creol & Fpce University Of Central Florida

• WU Yung-Hsun

  College of Optics and Photonics, University of Central Florida

• DU Fang

  College of Optics and Photonics, University of Central Florida

• WU Shin-Tson

  College of Optics and Photonics, University of Central Florida

関連論文

• Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
• Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
• Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
• On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
• Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
• Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
• Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
• Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
• Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
• Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
• Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
• The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability
• The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process
• Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
• Dual-Frequency Addressed Variable Optical Attenuator with Submillisecond Response Time
• Liquid-Crystal-Based Fourier Optical Spectrum Analyzer without Moving Parts
• Polymer-Stabilized Cholesteric Liquid Crystal for Polarization-Independent Variable Optical Attenuator
• An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
• Diffraction Effect on High-Resolution Liquid-Crystal-on-Silicon Devices
• Low Loss Liquid Crystal Photonic Bandgap Fiber in the Near-Infrared Region
• Dual-Frequency Addressed Variable Optical Attenuator with Submillisecond Response Time
• Liquid-Crystal-Based Fourier Optical Spectrum Analyzer without Moving Parts

もっと見る 閉じる

スポンサーリンク