An Improved In_<0.5>Ga_<0.5>P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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HSU Wei-Chou
Department of Electrical Engineering, National Cheng-Kung University
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Wu Yi-hong
Department Of Electrical Engineering Kyoto University:(present Address)department Of Electrical Engi
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Wu Y‐h
Taiwan Semiconductor Manufacturing Co. Hsin‐chu Twn
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Wu Yi-hsun
Taiwan Semiconductor Manufacturing Company R&d Device Department
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Hsu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Hsu Wei-chou
Department Of Electrical Engineering National Cheng Kung University
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WU Yu-Huei
Department of Electrical Engineering, National Cheng Kung University
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SU Jan-Shing
Department of Electrical Engineering, National Cheng Kung University
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LIN Wei
Photonic Technology Research, Telecommunication Lab., Ministry of Transportation and Communication
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Hsu Wei-cheng
Materials Research Laboratory
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Su Jan-shing
Department Of Electrical Engineering National Cheng Kung University
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LIN Yu-Shyan
Department of Electrical Engineering, National Cheng Kung University
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HO Shing-Dong
Department of Electrical Engineering, National Cheng Kung University
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Lin Y‐s
National Cheng Kung Univ. Tainan Twn
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Ho Shing-dong
Department Of Electrical Engineering National Cheng Kung University
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Lin Wei
Photonic Technology Research Telecommunication Laboratories Chunghwa Telecom Co. Ltd.
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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