Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Chen Chun-yuan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Tsai Yan-ying
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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LAI Po-Hsien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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FU SSU-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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YEN Chih-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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KAO Chung-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHEN Chun-Wei
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Lai Po-hsien
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Fu Ssu‐i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Kao Chung-i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Yen Chih-hung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Fu Ssu-i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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