On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2007-01-25
著者
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Hung Ching‐wen
Department Of Chemical Engineering National Cheng-kung University
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Tsai Yan-ying
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Chen Huey‐ing
National Cheng‐kung Univ. Tainan Twn
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LAI Po-Hsien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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FU SSU-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHENG Shiou-Ying
Department of Electronic Engineering, National Ilan University
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HUNG Ching-Wen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Lai Po-hsien
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Fu Ssu‐i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Cheng Shiou-ying
Department Of Electrical Engineering Oriental Institute Of Technology
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Fu Ssu-i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Hung Ching-wen
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
関連論文
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- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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- Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors