Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_<1-x>/GaAs Pseudomorphic Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-01
著者
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LOUR Wen-Shiung
Department of Electrical Engineering, Private Kung-San Institute of Technology and Commerce
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LIU Wen-Chau
Department of Electrical Engineering, National Cheng-Kung University
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
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CHENG Shiou-Ying
Department of Electronic Engineering, National Ilan University
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Wang W‐c
National Cheng‐kung Univ.
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Chang Wen-lung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Cheng Shiou-ying
Department Of Electrical Engineering Oriental Institute Of Technology
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Pan H‐j
National Cheng‐kung Univ. Tainan Twn
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CHANG Wen-Lung
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road
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PAN Hsi-Jen
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road
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WANG Wei-Chou
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road
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THEI Kong-Beng
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road
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Thei Kong-beng
Department Of Electrical Engineering National Cheng-kung University 1 University Road
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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