Three-Terminal Dual-Emitter Phototransistor with Both Voltage- and Power-Tunable Optical Gains
スポンサーリンク
概要
- 論文の詳細を見る
InGaP/GaAs dual-emitter heterojunction phototransistors (DEPTs) with an emitter biased using a voltage is reported for comparison to heterojunction phototransistors (HPTs) with a floating base operated in the p–i–n and transistor modes and to the HPTs with a base biased using a voltage. Although the power- and voltage-tunable optical gains are expected when the base of the HPT is floated and biased using a voltage, respectively, a conventional HPT's configuration does not simultaneously exhibit both. On the contrary, the optical gains of the DEPT can be tuned by both the voltage applied to the emitter and the incident optical power. Experimental results show that (1) the power-tunable optical gains are in the range of 11–29 as determined by the incident optical power upon the HPT with a floating base, (2) the small optical gains tuned by a voltage are 0.83–1.6 with a gain-tuning efficiency of 4.4 V-1 for the HPT with a base electrode, and (3) the DEPT with an emitter biased using a voltage exhibits an enhanced optical gain, with a gain-tuning efficiency of 43.4 V-1, when compared with the HPT with a floating base. Finally, a new concept of current-sharing effects in the base region is introduced to explain power- and/or voltage-tunable characteristics with good agreement found.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
-
Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
-
Tan Shih-wei
Department Of Electrical Engineering National Taiwan Ocean University
-
Chen Wei-Tien
Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China
-
Chen Hon-Rung
Department of Electrical Engineering, National University of Kaohsiung, 700 Kaohsiung University Road, Kaohsiung, Taiwan, Republic of China
-
Hsu Meng-Kai
Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China
-
Hsu Meng-Kai
Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China
-
Tan Shih-Wei
Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China
-
Chen Wei-Tien
Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Keelung, Taiwan, Republic of China
-
Chen Wei-Tien
Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan
-
Chen Hon-Rung
Department of Electrical Engineering, National University of Kaohsiung, 700 Kaohsiung University Road, Kaohsiung 811, Taiwan, R.O.C.
関連論文
- Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Effect of Collector-Base Barrier on GaInP/GaAs Double Heterojunction Bipolar Transistor and Further Improvement by Doping-Spike
- Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
- Comparison of GaAs, InGaAs, and GaAs/InGaAs Doped Channel Field-Effect Transistors with AlGaAs Insulator Gate
- S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device
- Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor
- Characterization of Graded Pulse-Doped Channel AlGaAs/InGaAs/GaAs Heterojunction Field-Effect Transistors
- Applications of Transition-Emitter Superlattice to Bipolar Transistors
- Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor with Biased Emitter and Heterojunction Phototransistor with Biased Base
- An Investigation of Direct-Current Characteristics of Composite-Emitter Heterojunction Bipolar Transistors
- Three-Terminal Dual-Emitter Phototransistor with Both Voltage- and Power-Tunable Optical Gains
- Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment
- Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch
- GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration