Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor
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概要
- 論文の詳細を見る
A novel AlGaAs/GaAs superlattice-emitter transistor (SET) has been fabricated and investigated at low temperature. The proposed SET device exhibits significant double negative-differential-resistance (NDR) behavior with a high peak-to-valley current ratio due to tunneling through the ground band and the first excited band in the superlattice. In the transistor operation, a common-emitter current gain of over 60 and a collector offset voltage smaller than 0.2 V at 77 K have been obtained. Due to its excellent properties, especially when using GaAs-based material, the proposed SET can be used as a functional device which provide good potential for frequency multipliers and multiple-valued logic circuit applicaions.
- 社団法人応用物理学会の論文
- 1991-04-01
著者
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LOUR Wen-Shiung
Department of Electrical Engineering, Private Kung-San Institute of Technology and Commerce
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
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