Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-11-15
著者
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Chen Huey-ing
Department Of Chemical Engineering National Cheng-kung University
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Hung Ching‐wen
Department Of Chemical Engineering National Cheng-kung University
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Wang Chik-kai
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Chen Huey‐ing
National Cheng‐kung Univ. Tainan Twn
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PAN Hsi-Jen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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LIN Kun-Wei
Department of Electrical Engineering, Chien Kuo Institute of Technology
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林 焜尉
國立交通大學 光電工程研究所
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Lin K‐w
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Lin Kun-wei
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Pan Hsi-jen
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Chen Huey-Ing
Department of Chemical Engineer, National Cheng-Kung University
関連論文
- Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor
- AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition
- Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
- DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
- Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT)
- A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
- Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
- Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
- Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
- 新型液晶投影電視的照明系統
- Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
- Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors
- IN-PLANE SWITCHING液晶顯示器操作原理的分析與模擬
- 以三推査表和插値分析液晶投影電机的色彩
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
- Characteristics of a New Resistive-Type Hydrogen Sensor
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Investigation of a Step-Doped-Channel Negative-Differential-Resistance Transistor
- Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
- Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor
- Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
- AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition
- New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor
- Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment
- Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors