DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Chen Chun-yuan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Tsai Yan-ying
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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LAI Po-Hsien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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FU SSU-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHENG Shiou-Ying
Department of Electronic Engineering, National Ilan University
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Lai Po-hsien
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Fu Ssu‐i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Cheng Shiou-ying
Department Of Electrical Engineering Oriental Institute Of Technology
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Fu Ssu-i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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