Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-04-15
著者
-
GUO Der-Feng
Department of Electronic Engineering, Private Kung-San Institute of Technology and Commerce
-
LIU Wen-Chau
Department of Electrical Engineering, National Cheng-Kung University
-
Hsu W‐c
National Cheng‐kung Univ. Tainan Twn
-
Liu W‐c
National Cheng‐kung Univ. Tainan Twn
-
Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
-
Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
-
Guo D‐f
Chinese Air Force Acad. Kaoshiung County Twn
-
Guo Der-feng
Department Of Electronic Engineering Private Kung-san Institute Of Technology And Commerce
-
Guo Der-feng
Department Of Electrical Engineering National Cheng-kung University
-
Hsu Wei-cheng
Materials Research Laboratory
-
SUN Chung-Yih
Department of Electrical Engineering, National Cheng-Kung University
-
HSU Web-Chou
Department of Electrical Engineering, National Cheng-Kung University
-
Hsu Web-chou
Department Of Electrical Engineering National Cheng Kung University
-
Sun C‐y
Department Of Electrical Engineering National Cheng-kung University
-
Sun Chung-yih
Department Of Electrical Engineering National Cheng Kung University
-
Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
関連論文
- Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
- DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
- Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT)
- A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
- Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
- Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
- Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
- Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
- Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors
- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
- Characteristics of a New Resistive-Type Hydrogen Sensor
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Investigation of a Step-Doped-Channel Negative-Differential-Resistance Transistor
- Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
- An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
- Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-Doped GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructures
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
- A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy
- Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
- S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device
- Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor
- Electronic Transport Characteristics in GaAs Double-Sawtooth-Doping Superlattice Structure
- Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
- Applications of Transition-Emitter Superlattice to Bipolar Transistors
- Properties of Sawtooth-Doping Superlattice with Different Delta-Doping Densities
- AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition
- New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor
- Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment
- Enhanced Luminescence and Reduced Junction Temperature in n-Type Modulation-Doped AlGaInP Multiquantum-Well Light-Emitting Diodes
- Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch
- A Multistate Switch with Double Delta-Doped Strained-Layer Quantum Wells
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors