A Multistate Switch with Double Delta-Doped Strained-Layer Quantum Wells

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概要

• 論文の詳細を見る

• A GaAs–InGaAs switching device, prepared by molecular beam epitaxy (MBE), has been investigated. A double delta-doped (δ-doped) strained-layer quantum-well structure is employed to produce the potential wells for the carrier confinement and the potential barriers for carriers thermionically emitted over them. Equipped with the different doping levels of the δ-doped sheets, the barriers are successively collapsed to form a double negative-differential-resistance (NDR) phenomenon in the current–voltage ( I–V ) characteristics when a sufficient external bias is applied to this device. Moreover, because the temperature variation changes the carrier confinement efficiency and carrier thermal energy, the NDR characteristics are sensitive to environmental temperature. The influence of temperature on the device performance is also discussed.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Guo Der-feng

  Department Of Electrical Engineering National Cheng-kung University

• Guo Der-Feng

  Department of Electronic Engineering, Chinese Air Force Academy, P.O.Box 90277-4 Kangsun,

関連論文

• Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
• Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
• A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy
• Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
• A Multistate Switch with Double Delta-Doped Strained-Layer Quantum Wells

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