A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
A new GaAs switching device with AlGaAs confinement collector structure has been demonstrated. An interesting S-shaped negative-differential-resistance (NDR) phenomenon, originating from the impact ionization at the GaAs intrinsic layer and the screening effect of acceptors at the p^+ base region, is observed. From the experimental results, it is known that the temperature variation plays an important role in the transport characteristics. Furthermore, the significant control voltage ratio, V_S/V_H, of the studied structure introduces a good potential for switching circuit applications.
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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GUO Der-Feng
Department of Electronic Engineering, Private Kung-San Institute of Technology and Commerce
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LIU Wen-Chau
Department of Electrical Engineering, National Cheng-Kung University
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Lee Y‐s
Yonsei Univ. Seoul Kor
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Lee Yeong-shyang
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Liu Wen-chau
Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Guo Der-feng
Department Of Electrical Engineering National Cheng-kung University
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Lee You-sang
School Of Electrical Engineering Seoul National University
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