Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
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概要
- 論文の詳細を見る
A theoretical model related to minority carrier properties was developed to study the DC performance of a heterostructure-emitter bipolar transistor (HEBT) which uses an AlGaAs/GaAs heterojunction only for minority carrier confinement and causes improved emitter electron injection efficiency. In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers was also taken into account. On the other hand, current gains of 55 and 180 were achieved experimentally for an HEBT with Al_<0.3>Ga_<0.7>As and Al_<0.5>Ga_<0.5>As confinement layers, respectively. It is found that the calculated data were agree with the experimental results. With the reduction of the base width to 0.1 μm, a common-emitter current gain of around 1000 with small offset voltage was confirmed. These results reveal that the HEBT exhibits the feature of simplicity and excellent DC performance.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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LOUR Wen-Shiung
Department of Electrical Engineering, Private Kung-San Institute of Technology and Commerce
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Guo D‐f
Chinese Air Force Acad. Kaoshiung County Twn
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Guo Der-feng
Department Of Electronic Engineering Private Kung-san Institute Of Technology And Commerce
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Guo Der-feng
Department Of Electrical Engineering National Cheng-kung University
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Lour W‐s
National Taiwan‐ocean Univ. Keelung Twn
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Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
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Liu Rong-chau
Chung Shan Institute Of Science And Technology
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