Characterization of Graded Pulse-Doped Channel AlGaAs/InGaAs/GaAs Heterojunction Field-Effect Transistors

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This paper reports on the fabrication and characterization of graded pulse-doped channel AlGaAs/InGaAs/GaAs heterojunction field-effect transistors (HFET's). Triple pulse-doped sheets, δ(n_1)=1.2×10^<12>, δ(n_2)4×10^<11>, δ(n_3)=1×10^<11> cm^<-2> from buffer to gate is used as an active channel. Typical drain-to-source and gate-to-drain breakdown voltages are larger than 25 V. The further enhancement in breakdown voltage is using the following methodology: 1) a strained AlGaAs insulator, 2) an InGaAs quantum-well like channel, and 3) less impurity scattering in the graded pulse-doped channel. The maximum transconductance is 160 mS/mm with an available current density of 250 mA/mm. Further increasing the δ(n_1) to 4×10^<12>cm^<-2>, the maximum transconductance is 165 mS/mm. The available current density is increased to 480 mA/mm. Moreover, their transconductance vs. gate voltage profiles display broad plateaus. The fabricated devices exhibit a small output conductance of 0,3 mS/mm. The evaluated open-drain voltage gain is as high as 500. These results have better performances than those of i-AlGaAs/n^+-InGaAs HFET's fabricated by our system.
社団法人応用物理学会の論文
1997-03-15