Evidence of Zero Potential Spike Energy in AlGaAs/GaAs Heterostructure Emitter Bipolar Transistors
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概要
- 論文の詳細を見る
The potential spike energy at the emitter junction of AlGaAs/GaAs heterostructure emitter bipolar transistors (HEBT) was directly measured for the first time. Experimental data revealed that emitter thickness as thin as 300 Å is thick enough to eliminate potential spike without compositional grading. It is found that the band bending in n-GaAs reduces the potential spike and hence very low offset voltage of 70 mV with high current gain of 150 can be obtained.
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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Chang C.
Department Of Anatomy Taipei Medical University
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CHEN H.
Department of Electrical Engineering, University of Maryland Baltimore County
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Lee C.
Department Of Electrophysics Kwangwoon University
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Tsang J.
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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TSAI K.
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Lee C.
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lee C.
Department Of Anatomical Pathology The Royal Prince Alfred Hospital
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Tsai K.
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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CHEN H.
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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