The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor
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概要
- 論文の詳細を見る
The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a TubeFET into charge traps on the surface of the SiO2 gate dielectric, thus shifting the threshold voltage. This memory can be written and erased many times, and has a hold time of hundreds of seconds at room temperature. At second we have attempted to make a Peapod tubeFET. It is the structure that a C60 was contained within the tube and separated from it by a graphitic Van der Waals gap. $I$–$V$ property of the Peapod shows semiconducting property.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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PARK K.
Department of Physiology, School of Dentistry and Dental Research Institute, Seoul National Universi
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Kim H.
Department Of Advanced Materials Science The University Of Tokyo
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Kim M.
Department Of Atmospheric Science Kongju National University
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KANG K.
Department of Geosystem Engineering, Graduate School of Engineering, The University of Tokyo
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Lee C.
Department Of Anatomical Pathology The Royal Prince Alfred Hospital
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Johnson A.
Department Of Physical And Engineering Metallurgy Polytechnic Institute Of Brooklyn:(present Address
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Johnson A.
Department of Physics, University of Pennsylvania, USA
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Fischer J.
Department of Material Science and Engineering, University of Pennsylvania, USA
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Lee C.
Department of Material Science and Engineering, KAIST, Gusong-dong, Yusong-gu, Taejeon 305-701, Korea
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Kim H.
Department of Material Science and Engineering, KAIST, Gusong-dong, Yusong-gu, Taejeon 305-701, Korea
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Kim M.
Department of Material Science and Engineering, KAIST, Gusong-dong, Yusong-gu, Taejeon 305-701, Korea
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Park K.
Department of Material Science and Engineering, KAIST, Gusong-dong, Yusong-gu, Taejeon 305-701, Korea
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