Effect of Collector-Base Barrier on GaInP/GaAs Double Heterojunction Bipolar Transistor and Further Improvement by Doping-Spike

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概要

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• We report the effects of a collector-base barrier on GaInP/GaAs double heterojunction bipolar transistors (DHBT's). A potential barrier exists at the collector-base heterointerface due to a small yet finite conduction band discontinuity. The voltage-dependent barrier that blocks the electrons results in a large collector current saturation voltage (knee voltage). We found, through theoretical calculation, that the potential barrier is much higher and less sensitive to the external bias when the collector doping density is low. If the conduction band discontinuity of ΔE_c=0.2 eV is employed in the calculation, the collector-base voltage used to totally suppress the existing potential barrier varies from 2.5 V for N_C=1×10^<17> cm^<-3> to 17 V for N_C=2×10^<16> cm^<-3>. Further improvement in eliminating the barrier was achieved using the doping spike located at the heterointerface. A zero potential barrier was obtained even if the base collector was forward biased. Experimentally, we have successfully fabricated GaInP/GaAs DHBT's with and without doping spikes at the B-C heterointerface. Large knee voltages are observed in DHBT's without a doping spike. The improved DHBT's exhibit a high current gain of 280 and a small knee voltage smaller than 1.8 V, supporting the very low potential barrier at the B-C junction.

• 社団法人応用物理学会の論文
• 1997-10-15

著者

• LOUR Wen-Shiung

  Department of Electrical Engineering, Private Kung-San Institute of Technology and Commerce

• Lour Wen-shiung

  Department Of Electrical Engineering National Cheng Kung University

• Lour Wen-shiung

  Department Of Electrical Engineering National Taiwan-ocean University

• Chang Wen-lung

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University

• CHANG Wen-Lung

  Department of Electrical Engineering, National Cheng-Kung University, 1 University Road

関連論文

• Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
• Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
• Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
• Effect of Collector-Base Barrier on GaInP/GaAs Double Heterojunction Bipolar Transistor and Further Improvement by Doping-Spike
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