Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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TSAI Jung-Hui
Department of Electronic Engineering, National Kaohsiung Normal University
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Cheng C‐c
De‐lin Inst. Technol. Taipei Twn
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Tsai J‐h
National Center For High‐performance Computing Hsinchu Twn
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Tsai Jung-hui
Department Of Physics National Kaoksiung Normal University
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Tsai Jung-hui
Department Of Electronic Engineering Chien Kuo Institute Of Technology
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CHENG Shiou-Ying
Department of Electronic Engineering, National Ilan University
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LIN Kun-Wei
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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林 焜尉
國立交通大學 光電工程研究所
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Lin K‐w
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Lin Kun-wei
Institute Of Electro-optic Engineering National Chiao Tung University
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Chang Wen-lung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Cheng Shiou-ying
Department Of Electrical Engineering Oriental Institute Of Technology
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YU Kou-Hui
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHENG Chin-Chuan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Yu Kou-hui
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Yu Kuo-hui
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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