Drift and Hysteresis Effects on AIN/SiO_2 Gate pH Ion-Sensitive Field-Effect Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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CHEN Ying-Chung
Department of Electrical Engineering, National Sun Yat-Sen University
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Cheng C‐c
De‐lin Inst. Technol. Taipei Twn
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Chen Yih-chiin
Department Of Botany National Chung-hsing University
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Chou J‐c
National Yunlin Univ. Sci. And Technol. Yunlin Twn
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Chiang Jung-lung
Department Of Electronic Engineering Chung Chou Institute Of Technology
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CHOU Jung-Chuan
Department of Electronic Engineering, National Yunlin University of Science and Technology
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LIAU Guo
Department of Electronic Engineering, National Yunlin University of Science and Technology
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CHENG Chien-Chuan
Department of Electronic Engineering, De-Lin Institute of Technology
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