Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol-Gel Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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CHEN Ying-Chung
Department of Electrical Engineering, National Sun Yat-Sen University
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Chen Y‐c
National Sun Yat‐sen Univ. Kaohsiung Twn
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Cheng C‐c
De‐lin Inst. Technol. Taipei Twn
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Chen Yih-chiin
Department Of Botany National Chung-hsing University
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Chou J‐c
National Yunlin Univ. Sci. And Technol. Yunlin Twn
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CHOU Jung-Chuan
Institute of Electronics, National Chiao Tung University
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Chiang Jung-lung
Department Of Electronic Engineering Chung Chou Institute Of Technology
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Chen Y‐c
Tung Fung Coll. Technol. And Commerce Kao‐shiung Twn
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Chen Ying-chung
Department Of Electrical Engineering National Sun Yat-sen University Kaohsiung Taiwan R.o.c.
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Chen Y-c
Department Of Electrical Engineering National Sun Yat-sen University
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Chen Ying-chung
Department Of Electrical Engineering National Sun Yat-sen University
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Chin Ying-chung
Institute Of Electrical Engineering National Sun Yat-sen University
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CHENG Chien-Chuan
Department of Electronic Engineering, De-Lin Institute of Technology
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JAN Shiun-Sheng
Department of Electrical Engineering, National Sun Yat-Sen University
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LU Chun-Te
Department of Electrical Engineering, National Sun Yat-Sen University
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Lu Chun-te
Department Of Electrical Engineering National Sun Yat-sen University
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Chou Jung-chuan
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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Cheng Chien-chuan
Department Of Electronic Engineering Sze-hai Institute Of Technology And Commerce
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Jan Shiun-sheng
Department Of Electrical Engineering National Sun Yat-sen University
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Cheng Chin-Chuan
Department of Electronic Engineering, De-Lin Institute of Technology
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Chwn Ying-Chung
Department of Electrical Engineering, National Sun Yat-Sen University
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