Synthesis of C-Axis-Oriented Aluminum Nitride Films by Reactive RF Magnetron Sputtering for Surface Acoustic Wave : Electrical Properties of Condensed Matter

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C-axis-oriented aluminum nitride (AlN) films were deposited on SiO_2-coated Si substrates by reactive rf magnetron sputtering. The crystallization of the AlN films, identified by X-ray diffraction (XRD) , was dependent on the deposition conditions. Highly c-axis-oriented AlN films, for fabricating AlN/SiO_2/Si-based surface acoustic wave (SAW) devices, were obtained under an rf power of 300W, substrate temperature of 350℃, sputtering pressure of 7.5mTorr and N_2 concentration of 75%. A dense pebblelike surface texture of the c-axis-oriented AlN films with an average grain size of about 100nm was observed by scanning electron microscopy (SEM). The phase velocity showed a tendency to decrease with increasing kh, where k = 2π/λ is the wavenumber and h is the AlN film thickness. In partucular, the phase velocity and the electromechanical coupling coefficient of the sample at kh = 0.4 were calculated to be about 6080m/s and 1.1%, respectively.
社団法人応用物理学会の論文
2001-08-15