Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor

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概要

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• The nonideal and unstable factors of AlN-based ion-sensitive field-effect transistor (ISFET) devices including the drift and hysteresis effects have been investigated in this study. The drift and hysteresis of AlN-based pH-ISFET devices have been measured using a constant current constant voltage (CCCV) readout circuit. The drift rates were obtained by long-time monitoring for 12 h in pH = 1, 3, 5, 7, 9, and 11 buffer solutions, which indicated that the drift rate increased with the pH value. The hysteresis effect was investigated by exposing the AlN gate ISFET in pH = 7–3–7–11–7 loop cycles with loop times of 960 s, 1920 s and 3840 s, and the magnitudes of hysteresis of 1.0, 1.5 and 4.5 mV were obtained, respectively. The temperature coefficient of hysteresis was found to be approximately 0.234 mV/°C. In addition, it was also found that the hysteresis width with pH started from acid side is smaller than that started from basic side, which results in an asymmetric hysteresis effect.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-08-15

著者

• Chiang Jung-lung

  Department Of Electronic Engineering Chung Chou Institute Of Technology

• Chen Ying-chung

  Department Of Electrical Engineering National Sun Yat-sen University

• LIAU Guo

  Department of Electronic Engineering, National Yunlin University of Science and Technology

• Chou Jung-chuan

  Department Of Electronic Engineering National Yunlin University Of Science And Technology

• Cheng Chien-chuan

  Department Of Electronic Engineering Sze-hai Institute Of Technology And Commerce

• Liau Guo

  Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.

• Cheng Chien-Chuan

  Department of Electronic Engineering, De-Lin Institute of Technology, Tucheng, Taipei, Taiwan 236, R.O.C.

• Chou Jung-Chuan

  Department of Electronic Engineering and Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Douliou, Taiwan 640, R.O.C.

• Chiang Jung-Lung

  Department of Electrical Engineering, National Sun Yat-Sen University

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