SnO2 Separative Structure Extended Gate H+-Ion Sensitive Field Effect Transistor by the Sol–Gel Technology and the Readout Circuit Developed by Source Follower
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概要
- 論文の詳細を見る
In this study, the tin oxide membrane, fabricated by the sol–gel technology, was used as the pH-sensing layer of the extended gate H+-ion sensitive field effect transistor (EGFET) device. The sensing membrane was deposited on the silicon substrate. The cost of fabricating the EGFET device by the sol–gel technology is lower than by the other methods. The sensitivity of the sol–gel prepared tin oxide separative structure EGFET device is about 57.63 mV/pH in the range of pH1 to pH9. The readout circuit of the tin oxide EGFET was developed by the source follower.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Chen Zhi-jie
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Kwan Pik-kwan
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Chou Jung-Chuan
Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.
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Chou Jung-Chuan
Department of Electronic Engineering and Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Douliou, Taiwan 640, R.O.C.
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Chen Zhi-Jie
Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.
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