SnO_2 Separative Structure Extended Gate H^+-Ion Sensitive Field Effect Transistor by the Sol-Gel Technology and the Readout Circuit Developed by Source Follower
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概要
- 論文の詳細を見る
- 2003-11-15
著者
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CHOU Jung-Chuan
Department of Electronic Engineering, National Yunlin University of Science and Technology
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Chou Jung-chuan
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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KWAN Pik-Kwan
Department of Electronic Engineering, National Yunlin University of Science and Technology
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CHEN Zhi-Jie
Department of Electronic Engineering, National Yunlin University of Science and Technology
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Chen Zhi-jie
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Kwan Pik-kwan
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Chou Jung-Chuan
Department of Electronic Engineering and Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Douliou, Taiwan 640, R.O.C.
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- Bounds of automorphism groups of genus 2 fibrations
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