Study on the Optoelectronic Properties of Al/a-Si : H/a-As_2Se_3 Photorecetor for Electrophotography
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概要
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Due to its superior photosensitivity in visible light, amorphous selenium-based photoreceptors are widely used on photoreceptor drums in copying machnes. Hydrogenated amorphous silicon (a-Si : H), which has special homogeniety making it easily deposited on the substrate as well as excellent photosensitivity in visible light, is first applied as a blocking layer on photoreceptors. Because intrinsic a-Si : H film is an n-type semiconductor, this configuration generates Schottky contact and an np junction at the interfaces which could be regarded as an ideal photodiode. Therefore, attempted to adopt a-Si : H thin film as a blocking layer, and combine it with amorphous arsenic selenide (a-As_2Se_3) to prepare two structures of Al/Al_2O_3/a-As_2Se_3 and Al/a-Si : H/a-Ae_2Se_3 photoreceptors. Using an electrostatic paper analyzer (model : EPA-8100) to measure the photoinduced discharge curve (PIDC), we discovered that the Al/a-Si : H/a-As_2Se_3 structure has a high initial surface potential (V_<so>〜214V ; 41.63V/μm), excellent photosensitivity (E_<1/2>〜2.19lx・s), a low residual potential (V_r〜4V), and high contrast voltage ratio (214V/4V≅53.5). For a better unerstanding of phtoreceptors, we invetigated the potosensitivity at different incident wavelengths, the movement of carriers in the photoreceptors and the characteristics of photoreceptors during isothermal annealing.
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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Yang Shu-ying
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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Chou Jung-chuan
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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