Preparation of the SnO_2 Gate pH-Sensitive Ion Sensitive Field-Effect Transistor by the Sol-Gel Technology and Its Temperature Effect
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概要
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In this study, the metal-oxide-semiconductor field-effect transistor (MOSFET) and pH-sensitive ion sensitive field-effect transistor (ISFET) were prepared by depositing a SnO_2 thin film on the gate of a FET using a sol-gel method. Because the SnO_2 film fonned by this method was soluble in hot alkaline solution, the evaluation of the pH-sensitive ISFET was conducted in the pH range from 1 to 9 at 55℃. The pH sensitivity was 57.4 mV/pH at 25℃ and the temperature coefficient of the pH sensitivity was O.173mV/pH・℃. The pH value at the point of zero charge (pH_<pzc>) was determined to be 11.3 from the I_<DS>-V_g curves of the ISFET and MOSFET.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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Wang Yii-fang
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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Chou Jung-chua
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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Chou Jung-chuan
Institute Of Electronic And Information Engineering National Yunlin University Of Science And Techno
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