Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
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概要
- 論文の詳細を見る
- 2009-12-01
著者
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Liu W‐c
National Cheng‐kung Univ. Tainan Twn
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Tsai Tsung-han
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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YEN Chih-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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HSU Chia-Hao
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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CHEN Li-Yang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Hsu Chia-hao
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Chen Li-yang
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Yen Chih-hung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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LIU Yi-Jung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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YU Kuo-Hui
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Yu Kuo-hui
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Yi-jung
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-Chau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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