On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
The emitter ledge length effect on the performance of InGaP/GaAs heterojunction bipolar transistors is comprehensively studied. It is shown that the undesired potential saddle point at the edge of emitter ledge is substantially presented. At the saddle point, the electron density and recombination rate are decreased with increasing the emitter ledge length. However, the longer emitter ledge length increases the base-collector junction area which in turn deteriorates the high frequency performance. Therefore, the length of emitter ledge should be carefully considered. Based on the theoretical analysis and experimental results, the optimum emitter ledge length is near 0.8 μm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-01-25
著者
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Tsai Yan-ying
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Liu Wen-chau
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Lai Po-hsien
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Cheng Shiou-ying
Department Of Electrical Engineering Oriental Institute Of Technology
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Fu Ssu-i
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Hung Ching-wen
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Tsai Yan-Ying
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan, Taiwan 70101, Republic of China
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Hung Ching-Wen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan, Taiwan 70101, Republic of China
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Lai Po-Hsien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan, Taiwan 70101, Republic of China
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Fu Ssu-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan, Taiwan 70101, Republic of China
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Cheng Shiou-Ying
Department of Electronic Engineering, National Ilan University, No. 1 Sec. 1 Shen-Lung Road, I-Lan, Taiwan 26041, Republic of China
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