Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

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Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT)
A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
Resistance to External Optical Feedback of Low-Chirp Strained-Quantum-Well Complex-Coupled Distributed-Feedback Laser
Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors
High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
Characteristics of a New Resistive-Type Hydrogen Sensor
Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
Investigation of a Step-Doped-Channel Negative-Differential-Resistance Transistor
Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
A Study of Layer Thickness and Interface Qualities of Strained ln_xGa_As/GaAs Layers
A Four-Terminal GaAs Multiple-Function Transistor with a Buried Silicon-Doping Quantum Well
Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer
Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor
Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition
New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor
Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment
Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch
On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors

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