High-Temperature Breakdown Characteristics of δ-Doped In_<0.49>Ga_<0.51>P/GaAs/In_<0.25>Ga_<0.75>As/AlGaAs High Electron Mobility Transistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-10-15

著者

• HSU Wei-Chou

  Department of Electrical Engineering, National Cheng-Kung University

• Lee Ching-sung

  Department Of Electronic Engineering Feng Chia University

• Hsu Wei-chou

  Department Of Electrical Engineering National Cheng Kung University

• Chen Y‐c

  National Tsing Hua Univ. Hsinchu Twn

• Chen Yen-Wei

  Department of Electrical and Electronic Engineering, Faculty of Engineering, University of the Ryuky

• Chen Yen-wei

  Department Of Electrical Engineering National Cheng Kung University

• Chen Yen-wei

  Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of The Ryukyus

• CHEN Yung-Cha

  Department of Electrical Engineering, National Cheng Kung University

• SHIEH Hir-Ming

  Department of Electronic Engineering, Kung-Shan Institute of Technology

• Shieh Hir-ming

  Department Of Electronic Engineering Kung-shan Institute Of Technology

• Shieh Hir-ming

  Department Of Electrical Engineering National Cheng Kung University

• Lee Ching-sung

  Department Of Electrical Engineering National Cheng Kung University

関連論文

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