Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C
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概要
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This letter demonstrates the high external quantum efficiency (\mathit{EQE}) of poly(3-hexylthiophene) (P3HT)-based polymer solar cells and their enhanced hole transport ability through doping a wide-band-gap material tris(phenylpyrazole)iridium [Ir(ppz)<inf>3</inf>]. Doping Ir(ppz)<inf>3</inf>can enhance low wavelength optical absorption capacity and doping a small amount of Ir(ppz)<inf>3</inf>can also improve the crystallinity of P3HT. Moreover, the large energy barrier between Ir(ppz)<inf>3</inf>and the polymer active layer, which can reduce the electron current densities and increase the hole current densities, indicates a more balanced carrier transport based on hole- and electron-only devices. Such characteristics contribute to efforts to improve the photocurrent density of polymer solar cells.
- 2013-04-25
著者
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lee Ching-sung
Department Of Electrical Engineering National Cheng Kung University
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Wang Ching-Wu
Institute of Opto-Mechatronics, National Chung Cheng University, 168 University Road, Chia-Yi, Taiwan 62145, Republic of China
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Ho Chiu-Sheng
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
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Lai Ying-Nan
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
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Huang E-Ling
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
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Ho Chiu-Sheng
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Chen Wei-Min
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Yao En-Ping
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Huang E-Ling
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Hsu Wei-Chou
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Lai Ying-Nan
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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