Characteristics of GaAs-Based Long-Wavelength, Highly Strained InGaAs Quantum Well Vertical-Cavity Laser
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概要
- 論文の詳細を見る
Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252 nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.
- Japan Society of Applied Physicsの論文
- 2004-06-01
著者
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Chen I-liang
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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CHIOU Chih-Hung
Industrial Technology Research Institute
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Lee Zheng-hong
Industrial Technology Research Institute
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Chen I-Liang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
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Lu Chen-Ming
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Lee Tsin-Dong
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Lee Zheng-Hong
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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