Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C₆₁ Butyric Acid Methyl Ester Polymer Solar Cell by Doping Wide-Gap Material Tris(phenylpyrazole)iridium
スポンサーリンク
概要
著者
-
Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
-
Lee Ching-sung
Department Of Electrical Engineering National Cheng Kung University
-
Wang Ching-Wu
Institute of Opto-Mechatronics, National Chung Cheng University, 168 University Road, Chia-Yi, Taiwan 62145, Republic of China
-
Ho Chiu-Sheng
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
-
Lai Ying-Nan
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
-
Huang E-Ling
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
-
Chen Wei-Min
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
-
Yao En-Ping
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
-
Wang Ching-Wu
Institute of Opto-Mechatronics, National Chung Cheng University, Chiayi 62102, Taiwan, R.O.C.
-
Lee Ching-Sung
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan, R.O.C.
関連論文
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
- An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
- Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
- Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl_2/BCl_3/Ar Plasma
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
- Effects of Annealing on Polymer Solar Cells with High Polythiophene--Fullerene Concentrations
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
- Improved White Organic Light-Emitting Diodes with Modified Dual-Emission-Layer Designs
- Low Dark Current InGaAs(P)/InP p–i–n Photodiodes
- Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
- Investigations of $\delta$-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel
- Thermal-Stable Characteristics of Metamorphic Double $\delta$-Doped Heterostructure Field-Effect Transistor
- Characteristics of GaAs-Based Long-Wavelength, Highly Strained InGaAs Quantum Well Vertical-Cavity Laser
- Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor
- Off-State Breakdown Modeling for High-Schottky-Barrier $\delta$-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor
- Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
- Improved Step-Graded-Channel Heterostructure Field-Effect Transistor
- Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C
- Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of $\delta$-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer
- Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors
- Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C₆₁ Butyric Acid Methyl Ester Polymer Solar Cell by Doping Wide-Gap Material Tris(phenylpyrazole)iridium
- Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C_ Butyric Acid Methyl Ester Polymer Solar Cell by Doping Wide-Gap Material Tris(phenylpyrazole)iridium